S8550 数据手册
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技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: WEIDA S8550
- Transistor Type: NPN
- Operating Temperature: -55°C~+150°C@(Tj)
- Collector Current (Ic): 1.5A
- Power Dissipation (Pd): 1W
- Transition Frequency (fT): 100MHz
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 25V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@800mA,80mA
- Package: TO-92-3
- Manufacturer: WEIDA
- DC Current Gain (hFE@Ic,Vce): 120@50mA,1V
- Part id: 1292296